unisonic technologies co., ltd um6k1n preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2013 unisonic technologies co., ltd qw-r502-897.b silicon n-channel mosfet ? description the utc um6k1n is a silicon n-channel mosfet. it uses utc?s advanced technology to pr ovide the customers with a minimum on state resistance, high switching speed and low gate threshold voltage. the utc um6k1n is suitable for switching and interfacing applications. ? features * r ds(on) <8 ? @ v gs =4v, i d =10ma r ds(on) <13 ? @ v gs =2.5v, i d =1ma * high switching speed * low gate threshold voltage ? symbol g2 g1 s1 s2 d1 d2 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 um6k1nl-al6-r UM6K1NG-AL6-R sot-363 s1 g1 d2 s2 g2 d1 tape reel note: pin assignment: g: gate d: drain s: source ? marking
um6k1n preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-897.b ? absolute maximum ratings (t a =25c) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v drain current continuous i d 100 ma pulsed (note 1) i dm 200 ma power dissipation (note 2) t c =25c p d 150 mw channel temperature t ch 150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pw 10s, duty cycle 50%. 3. with each pin mounted on the recommended lands. ? electrical characteristics (t a =25c) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =10a, v gs =0v 30 v drain-source leakage current i dss v ds =30v, v gs =0v 1.0 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +1 a reverse v gs =-20v, v ds =0v -1 a on characteristics gate threshold voltage v gs ( th ) v ds =3v, i d =100a 0.8 1.5 v static drain-source on-state resistance r ds(on) v gs =4v, i d =10ma 5 8 ? v gs =2.5v, i d =1ma 7 13 ? forward transfer admittance |y fs | v ds =3v, i d =10ma 20 ms dynamic parameters input capacitance c iss v gs =0v, v ds =5v, f=1.0mhz 13 pf output capacitance c oss 9 pf reverse transfer capacitance c rss 4 pf switching parameters turn-on delay time t d ( on ) v dd 5v, v gs =5v, i d =10ma, r gs =10 ? , r l =500 ? 15 ns rise time t r 35 ns turn-off delay time t d ( off ) 80 ns fall-time t f 80 ns
um6k1n preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-897.b ? test circuits and waveforms v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off
um6k1n preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-897.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior wr itten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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